Tensile Strain in Si Due to Expansion of Lattice Spacings in CeO[sub 2] Epitaxially Grown on Si(111)

Tensile Strain in Si Due to Expansion of Lattice Spacings in CeO[sub 2] Epitaxially Grown on Si(111)

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Veröffentlicht in:Journal of the Electrochemical Society 2004, Vol.151 (9), p.F202
Hauptverfasser: Nishikawa, Yukie, Matsushita, Daisuke, Satou, Nobutaka, Yoshiki, Masahiko, Schimizu, Tatsuo, Yamaguchi, Takeshi, Satake, Hideki, Fukushima, Noburu
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Sprache:eng ; jpn
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container_issue 9
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container_title Journal of the Electrochemical Society
container_volume 151
creator Nishikawa, Yukie
Matsushita, Daisuke
Satou, Nobutaka
Yoshiki, Masahiko
Schimizu, Tatsuo
Yamaguchi, Takeshi
Satake, Hideki
Fukushima, Noburu
description
doi_str_mv 10.1149/1.1782120
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title Tensile Strain in Si Due to Expansion of Lattice Spacings in CeO[sub 2] Epitaxially Grown on Si(111)
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