Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing
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| Veröffentlicht in: | Journal of the Electrochemical Society 2003-07, Vol.150 (7), p.G404 |
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| container_issue | 7 |
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| container_title | Journal of the Electrochemical Society |
| container_volume | 150 |
| creator | Gray, W. D. Loboda, M. J. Bremmer, J. N. Struyf, H. Lepage, M. Van Hove, M. Donaton, R. A. Sleeckx, E. Stucchi, M. Lanckmans, F. Gao, T. Boullart, W. Coenegrachts, B. Maenhoudt, M. Vanhaelemeersch, S. Meynen, H. Maex, K. |
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| doi_str_mv | 10.1149/1.1577340 |
| format | Article |
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| ispartof | Journal of the Electrochemical Society, 2003-07, Vol.150 (7), p.G404 |
| issn | 0013-4651 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_1577340 |
| source | IOP Publishing Journals |
| title | Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing |
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