Facet-free selective silicon epitaxy by reduced-pressure chemical vapor deposition : Process evaluation and impact on shallow trench isolation

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Veröffentlicht in:	Journal of the Electrochemical Society 1999-05, Vol.146 (5), p.1895-1902
Hauptverfasser:	VIOLETTE, K. E, CHAO, C.-P, WISE, R, UNNIKRISHNAN, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page	1902
container_issue	5
container_start_page	1895
container_title	Journal of the Electrochemical Society
container_volume	146
creator	VIOLETTE, K. E CHAO, C.-P WISE, R UNNIKRISHNAN, S
description
doi_str_mv	10.1149/1.1391862
format	Article
fullrecord	<record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_1391862</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1866238</sourcerecordid><originalsourceid>FETCH-LOGICAL-c256t-c89ca96e2246ff0402e5877c977956a52a68d2f1ec0fbebe49a5369b3ace80603</originalsourceid><addsrcrecordid>eNpFkM1OwzAQhC0EEqVw4A184MIhxZsfJ-aGKgpIleAA52jjrFUjN4nstNCX4JkxbSVOu7P6ZqUZxq5BzABydQczyBRUMj1hE1B5kZQAcMomQkCW5LKAc3YRwmeUUOXlhP0sUNOYGE_EAznSo93GzTqr-47TYEf83vFmxz21G01tMngKYeOJ6xWtrUbHtzj0nrc09MGONrru-ZvvdcQ4bdFtcH_EruV2PaAeeVRhhc71X3z01OkVt6F3e-ySnRl0ga6Oc8o-Fo_v8-dk-fr0Mn9YJjot5JjoSmlUktI0l8aIXKRUVGWpVVmqQmKRoqza1ABpYRpqKFdYZFI1WQxbCSmyKbs9_NW-D8GTqQdv1-h3NYj6r8ga6mORkb05sAOGmNd47LQN_4ZKRqjKfgFv0nWB</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Facet-free selective silicon epitaxy by reduced-pressure chemical vapor deposition : Process evaluation and impact on shallow trench isolation</title><source>IOP Publishing Journals</source><creator>VIOLETTE, K. E ; CHAO, C.-P ; WISE, R ; UNNIKRISHNAN, S</creator><creatorcontrib>VIOLETTE, K. E ; CHAO, C.-P ; WISE, R ; UNNIKRISHNAN, S</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.1391862</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of the Electrochemical Society, 1999-05, Vol.146 (5), p.1895-1902</ispartof><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c256t-c89ca96e2246ff0402e5877c977956a52a68d2f1ec0fbebe49a5369b3ace80603</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1866238$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>VIOLETTE, K. E</creatorcontrib><creatorcontrib>CHAO, C.-P</creatorcontrib><creatorcontrib>WISE, R</creatorcontrib><creatorcontrib>UNNIKRISHNAN, S</creatorcontrib><title>Facet-free selective silicon epitaxy by reduced-pressure chemical vapor deposition : Process evaluation and impact on shallow trench isolation</title><title>Journal of the Electrochemical Society</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNpFkM1OwzAQhC0EEqVw4A184MIhxZsfJ-aGKgpIleAA52jjrFUjN4nstNCX4JkxbSVOu7P6ZqUZxq5BzABydQczyBRUMj1hE1B5kZQAcMomQkCW5LKAc3YRwmeUUOXlhP0sUNOYGE_EAznSo93GzTqr-47TYEf83vFmxz21G01tMngKYeOJ6xWtrUbHtzj0nrc09MGONrru-ZvvdcQ4bdFtcH_EruV2PaAeeVRhhc71X3z01OkVt6F3e-ySnRl0ga6Oc8o-Fo_v8-dk-fr0Mn9YJjot5JjoSmlUktI0l8aIXKRUVGWpVVmqQmKRoqza1ABpYRpqKFdYZFI1WQxbCSmyKbs9_NW-D8GTqQdv1-h3NYj6r8ga6mORkb05sAOGmNd47LQN_4ZKRqjKfgFv0nWB</recordid><startdate>19990501</startdate><enddate>19990501</enddate><creator>VIOLETTE, K. E</creator><creator>CHAO, C.-P</creator><creator>WISE, R</creator><creator>UNNIKRISHNAN, S</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19990501</creationdate><title>Facet-free selective silicon epitaxy by reduced-pressure chemical vapor deposition : Process evaluation and impact on shallow trench isolation</title><author>VIOLETTE, K. E ; CHAO, C.-P ; WISE, R ; UNNIKRISHNAN, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-c89ca96e2246ff0402e5877c977956a52a68d2f1ec0fbebe49a5369b3ace80603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>VIOLETTE, K. E</creatorcontrib><creatorcontrib>CHAO, C.-P</creatorcontrib><creatorcontrib>WISE, R</creatorcontrib><creatorcontrib>UNNIKRISHNAN, S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>VIOLETTE, K. E</au><au>CHAO, C.-P</au><au>WISE, R</au><au>UNNIKRISHNAN, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Facet-free selective silicon epitaxy by reduced-pressure chemical vapor deposition : Process evaluation and impact on shallow trench isolation</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1999-05-01</date><risdate>1999</risdate><volume>146</volume><issue>5</issue><spage>1895</spage><epage>1902</epage><pages>1895-1902</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1391862</doi><tpages>8</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0013-4651
ispartof	Journal of the Electrochemical Society, 1999-05, Vol.146 (5), p.1895-1902
issn	0013-4651 1945-7111
language	eng
recordid	cdi_crossref_primary_10_1149_1_1391862
source	IOP Publishing Journals
subjects	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	Facet-free selective silicon epitaxy by reduced-pressure chemical vapor deposition : Process evaluation and impact on shallow trench isolation
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T14%3A31%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Facet-free%20selective%20silicon%20epitaxy%20by%20reduced-pressure%20chemical%20vapor%20deposition%20:%20Process%20evaluation%20and%20impact%20on%20shallow%20trench%20isolation&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=VIOLETTE,%20K.%20E&rft.date=1999-05-01&rft.volume=146&rft.issue=5&rft.spage=1895&rft.epage=1902&rft.pages=1895-1902&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.1391862&rft_dat=%3Cpascalfrancis_cross%3E1866238%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true