Mitigating Re-Entrant Etch Profile Undercut in Au Etch with an Aqua Regia Variant

We investigate the re-entrant undercut profile resulting from Au wet etching for patterning micron range thick films using an aqua regia-based solution in comparison with an iodine-iodide-based commercial etchant. Our work discriminates between two undercutting mechanisms: galvanic acceleration of e...

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Veröffentlicht in:Journal of the Electrochemical Society 2022-08, Vol.169 (8), p.83504
Hauptverfasser: Ferguson, Mark, Najah, Mohamed, Banville, Frédéric, Boucherit, Mohamed, Miriyala, Naresh, Renaud, Jacques, Fréchette, Luc, Boone, François, Ecoffey, Serge, Charlebois, Serge A.
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Sprache:eng
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Zusammenfassung:We investigate the re-entrant undercut profile resulting from Au wet etching for patterning micron range thick films using an aqua regia-based solution in comparison with an iodine-iodide-based commercial etchant. Our work discriminates between two undercutting mechanisms: galvanic acceleration of etch rate at the Au adhesion or barrier layer, and delamination-based undercutting. We tracked etch outcomes of feature size reduction from photoresist size, undercut Au in cross-section and lift-off of small (5–10 μ m) features. Results indicate that galvanic undercutting is well-mitigated by the aqua regia solution compared to commercial etchant results. Good Au adhesion eliminates undercut for 500 nm-thick Au and mitigates it by ∼80% for 1 μ m-thick Au. We discuss the electrochemical origin of this mitigated galvanic undercut.
ISSN:0013-4651
1945-7111
DOI:10.1149/1945-7111/ac8769