Low Temperature Selective Epitaxy of Group-IV Semiconductors for Nanoelectronics

Low Temperature Selective Epitaxy of Group-IV Semiconductors for Nanoelectronics

We have evaluated low temperature epitaxy (LTE) of Phosphorous doped Si (Si:P) and Boron doped SiGe (SiGe:B) on Si(001) substrates. The benefit of LTE is very significant, enabling incorporation of high levels of active dopant for both p- and n-type layers. This translates into lower resistivity com...

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Veröffentlicht in:ECS transactions 2022-09, Vol.109 (4), p.87-92
Hauptverfasser: Khazaka, Rami, Marozas, Brendan, Kim, Wonjong, Givens, Michael
Format: Artikel
Sprache:eng
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Zusammenfassung:We have evaluated low temperature epitaxy (LTE) of Phosphorous doped Si (Si:P) and Boron doped SiGe (SiGe:B) on Si(001) substrates. The benefit of LTE is very significant, enabling incorporation of high levels of active dopant for both p- and n-type layers. This translates into lower resistivity compared to layers grown at higher temperature. However, several challenges appear when epitaxy occurs at low temperature (e.g.,
ISSN:1938-5862
1938-6737
DOI:10.1149/10904.0087ecst