n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser

Exploiting intersubband transitions in Ge/SiGe quantum cascade devices provides a way to integrate terahertz light emitters into silicon-based technology. With the view to realizing a Ge/SiGe Quantum Cascade Laser, we present the optical and structural properties of n-type strain-symmetrized Ge/SiGe...

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Veröffentlicht in:ECS transactions 2019-10, Vol.93 (1), p.63-66
Hauptverfasser: Ciano, Chiara, Di Gaspare, Luciana, Montanari, Michele, Persichetti, Luca, Baldassarre, Leonetta, Ortolani, Michele, Capellini, Giovanni, Skibitzki, Oliver, Zöllner, Marvin, Faist, Jerome, Scalari, Giacomo, Stark, David, Paul, Douglas J, Rew, Kirsty, Moutanabbir, Oussama, Mukherjee, Samik, Grange, Thomas, Birner, Stefan, Virgilio, Michele, De Seta, Monica
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Sprache:eng
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Zusammenfassung:Exploiting intersubband transitions in Ge/SiGe quantum cascade devices provides a way to integrate terahertz light emitters into silicon-based technology. With the view to realizing a Ge/SiGe Quantum Cascade Laser, we present the optical and structural properties of n-type strain-symmetrized Ge/SiGe asymmetric coupled quantum wells grown on Si(001) substrates by means of ultrahigh vacuum chemical vapor deposition. We demonstrate the high material quality of strain-symmetrized structures and heterointerfaces as well as control over the inter-well coupling and electron tunneling. Motivated by the promising results obtained on ACQWs, which are the basic building block of a cascade structure, we investigate, both experimentally and theoretically, a Ge/SiGe THz QCL design, optimized through a non-equilibrium Green's function formalism.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/09301.0063ecst