(Invited) A Deep Level Transient Spectroscopy Study of Hole Traps in Ge x Se 1-x -Based Layers for Ovonic Threshold Switching Selectors

(Invited) A Deep Level Transient Spectroscopy Study of Hole Traps in Ge x Se 1-x -Based Layers for Ovonic Threshold Switching Selectors

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Veröffentlicht in:ECS transactions 2019-07, Vol.92 (1), p.45-55
Hauptverfasser: Hsu, P.-C., Simoen, Eddy Roger, Lin, D, Stesmans, Andre, Goux, Laurent, Delhougne, Romain, Kar, Gouri Sankar
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container_title ECS transactions
container_volume 92
creator Hsu, P.-C.
Simoen, Eddy Roger
Lin, D
Stesmans, Andre
Goux, Laurent
Delhougne, Romain
Kar, Gouri Sankar
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doi_str_mv 10.1149/09201.0045ecst
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title (Invited) A Deep Level Transient Spectroscopy Study of Hole Traps in Ge x Se 1-x -Based Layers for Ovonic Threshold Switching Selectors
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