(Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

(Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

Quasi-vertical, high Al composition AlGaN Schottky diodes with breakdown voltages up to 500 V were grown on high quality AlN single crystal substrates. Diodes exhibited a ~106 current rectification ratio, a 7 MV/cm peak field at blocking, and a 1.45 MW/cm2 unipolar figure of merit. Challenges for th...

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Hauptverfasser: Dalmau, Rafael, Craft, Hughes Spalding, Schlesser, Raoul, Mita, Seiji, Smart, Joseph, Hitchcock, Collin, Pandey, Gyanesh, Chow, Tat-Sing Paul, Moody, Baxter
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Quasi-vertical, high Al composition AlGaN Schottky diodes with breakdown voltages up to 500 V were grown on high quality AlN single crystal substrates. Diodes exhibited a ~106 current rectification ratio, a 7 MV/cm peak field at blocking, and a 1.45 MW/cm2 unipolar figure of merit. Challenges for this emerging technology, including doping limitations and compensation in AlGaN alloys, Ohmic contacts, and device termination are discussed.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/08007.0217ecst