Study of SiGe Surface Cleaning
SiGe is a promising candidate to replace Si in Fin-shaped and GAA (gate all around) FETs (field-effect transistors) due to its higher carrier mobility. However, the presence of Ge oxide in the interfacial layer (IL) between the SiGe channel and HfO2 causes an increase in interface trap density (DIT)...
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| creator | Komori, Kana Wostyn, Kurt Rondas, Dirk Prado, Jana Loya Conard, Thierry Loo, Roger Ragnarsson, Lars-Åke Horiguchi, Naoto Holsteyns, Frank |
| description | SiGe is a promising candidate to replace Si in Fin-shaped and GAA (gate all around) FETs (field-effect transistors) due to its higher carrier mobility. However, the presence of Ge oxide in the interfacial layer (IL) between the SiGe channel and HfO2 causes an increase in interface trap density (DIT) and becomes in considerate as a defect of the device. In this study, the IL formation by a combined wet cleaning process with a subsequent annealing step is investigated by X-ray Photo-electron Spectroscopy (XPS). Finally we will present a process sequence leading up to a Ge-oxide free interlayer. |
| doi_str_mv | 10.1149/08002.0141ecst |
| format | Conference Proceeding |
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However, the presence of Ge oxide in the interfacial layer (IL) between the SiGe channel and HfO2 causes an increase in interface trap density (DIT) and becomes in considerate as a defect of the device. In this study, the IL formation by a combined wet cleaning process with a subsequent annealing step is investigated by X-ray Photo-electron Spectroscopy (XPS). 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However, the presence of Ge oxide in the interfacial layer (IL) between the SiGe channel and HfO2 causes an increase in interface trap density (DIT) and becomes in considerate as a defect of the device. In this study, the IL formation by a combined wet cleaning process with a subsequent annealing step is investigated by X-ray Photo-electron Spectroscopy (XPS). Finally we will present a process sequence leading up to a Ge-oxide free interlayer.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/08002.0141ecst</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2017, Vol.80 (2), p.141-146 |
| issn | 1938-5862 1938-6737 1938-6737 1938-5862 |
| language | eng |
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| source | Institute of Physics Journals |
| title | Study of SiGe Surface Cleaning |
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