(Invited) Unseeded Growth of Poly-Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing

We investigated unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-µm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 µm wide and ~10 µm long, where the maximum length was 20 µm. Crystallization process was discussed from dependence of the laser fluence on the crystal states of Ge stripes as well as temperature simulations.