Fabrication of Graphene/Porous Silicon Nitride Material for Field-Effect Transistors

In this work, the preparation of graphene structures transferred to the silicon nitride substrates with two different morphologies (holes and grooves) is demonstrated. The graphene layer is deposited on the bottom of the holes and grooves after the transfer process, and its properties have been investigated. The 2D peak frequencies of grapheme (both the H-graphene and the G-graphene) in hole and groove shift left. The strain in G-graphene is larger than H-graphene, while the surface roughness of H-graphene is bigger than G-graphene. This means the morphologies of the pattern will also influence the strain in graphene, which is expected to supply a way to improve the properties of micro/nano-devices.