(Invited) Characteristics of a Wire-Bonding-Less SiC Power Module Operating in a Wide Temperature Range
Using high-speed switching, SiC power devices can reduce on-resistance in the on-state to realize low power converter losses. In addition, SiC power devices can be operated in high temperatures; thus, their cooling systems can be reduced in size or removed altogether, thereby increasing the power de...
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Veröffentlicht in: | ECS transactions 2015-09, Vol.69 (11), p.123-132 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Using high-speed switching, SiC power devices can reduce on-resistance in the on-state to realize low power converter losses. In addition, SiC power devices can be operated in high temperatures; thus, their cooling systems can be reduced in size or removed altogether, thereby increasing the power density of the power converter. The authors have studied a power module and power converter using properties of SiC power devices, and have previously proposed a power converter having high power density with a power module that is capable of high temperature operation , a gate driving technique for SiC power devices to prevent false turn-on with high-speed switching, and development of a noise filter for high-speed switching or high-frequency switching. In this study, we designed and fabricated a SiC power module with a built-in snubber circuit. This power module is operable in high temperatures over 200 °C. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/06911.0123ecst |