(Invited) Tunneling FET Technologies Using III-V and Ge Materials

We have demonstrated high performance operation of planar-type tunnel field-effect transistors (TFETs) using Ge/III-V materials. It is found that solid-phase Zn diffusion can realize steep-profile and defect-less p+/n source junctions. We have demonstrated the operation of high I on /I off and low SS planar-type InGaAs tunnel FETs with Zn-diffused source junctions. The small S.S. of 64 mV/dec and large I on /I off ratio over10 6 has been realized in the planar-type III-V TFETs. It is also shown that tensile strain in Si channels (sSi) combined with the Ge source can enhance the tunneling current because of the reduced effective energy bandgap. The fabricated Ge/sSOI (1.1 %) TFETs show high I on /I off ratio over 10 7 and steep minimum subthreshold slope (SS) of 28 mV/dec.