(Invited) Power Loss Reduction in Perforated-Channel HFET Switches

The work presents a novel perforated channel field-effect transistor (PC-FET) design that reduces the power losses and significantly improves the efficiency of power electronics systems. The improvement is achieved by making use of a strong current spreading effect in the source-gate and gate-drain spacing and by lateral/vertical profiling of the channel under the gate. The reduction of the switch on-resistance and output capacitance reduces the conversion loss in the power switch by more than a factor of 2.