(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come

(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come

In 2013 Raytheon began to integrate deep submicron (≤0.25 µm gate) 200mm GaN on Si HEMT processes within a commercial CMOS Si Foundry environment. When fully realized, these processes will demonstrate multi GHz GaN on Si MMICs by leveraging a fully subtractively processed transistor coupled with mul...

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Hauptverfasser: Laroche, J., Ip, K., Breen, M., Hoke, W., Cao, Y., Bettencourt, J., Guenther, D., Gebara, G., Kennedy, T., Schultz, B., Laboutin, O., Fong, C., Trimble, T., Johnson, W., Kazior, T., Comeau, J.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In 2013 Raytheon began to integrate deep submicron (≤0.25 µm gate) 200mm GaN on Si HEMT processes within a commercial CMOS Si Foundry environment. When fully realized, these processes will demonstrate multi GHz GaN on Si MMICs by leveraging a fully subtractively processed transistor coupled with multi level copper based back end of line (Cu BEOL) processes. This work provides a status update on the progress towards that goal.
ISSN:1938-5862
1938-6737
DOI:10.1149/06104.0029ecst