Capacitance-Voltage Characteristics of Symmetric Stacked Bonding Structure in 3D Integration

Capacitance-Voltage Characteristics of Symmetric Stacked Bonding Structure in 3D Integration

Stacked bonding is one of the most promising approaches to realize three-dimensional integration. In this paper, an analytical model is proposed for the low frequency and high frequency capacitance-voltage characteristics of the symmetric stacked bonding structure. The model is verified by the agree...

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Hauptverfasser: Li, Man, Guo, Yufeng, Lin, Hong, Ji, Xincun, Xia, Xiaojuan, Wang, Bin
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Guo, Yufeng
Lin, Hong
Ji, Xincun
Xia, Xiaojuan
Wang, Bin
description Stacked bonding is one of the most promising approaches to realize three-dimensional integration. In this paper, an analytical model is proposed for the low frequency and high frequency capacitance-voltage characteristics of the symmetric stacked bonding structure. The model is verified by the agreements between the analytical results and numerical simulation results using MEDICI, a two-dimensional semiconductor device simulator. Then, the influence of the doping concentration, oxide thickness and flat-band voltage on the capacitance-voltage characteristics under various bias conditions is researched. This work carries on an approach for the non-destructive characterization of the symmetric stacked bonding structure in three-dimensional integration.
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title Capacitance-Voltage Characteristics of Symmetric Stacked Bonding Structure in 3D Integration
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