Capacitance-Voltage Characteristics of Symmetric Stacked Bonding Structure in 3D Integration
Stacked bonding is one of the most promising approaches to realize three-dimensional integration. In this paper, an analytical model is proposed for the low frequency and high frequency capacitance-voltage characteristics of the symmetric stacked bonding structure. The model is verified by the agree...
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Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Stacked bonding is one of the most promising approaches to realize three-dimensional integration. In this paper, an analytical model is proposed for the low frequency and high frequency capacitance-voltage characteristics of the symmetric stacked bonding structure. The model is verified by the agreements between the analytical results and numerical simulation results using MEDICI, a two-dimensional semiconductor device simulator. Then, the influence of the doping concentration, oxide thickness and flat-band voltage on the capacitance-voltage characteristics under various bias conditions is researched. This work carries on an approach for the non-destructive characterization of the symmetric stacked bonding structure in three-dimensional integration. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/06001.0975ecst |