The Comparison of Various S/D Series Resistances Methods for Deeply Submicron MOSFETs

Accurate extraction of source/drain series resistance ( R s /R d ) is crucial to the modeling and application of deeply scaled MOSFET devices. In this study, we investigate three methods of extracting source/drain series resistance for deep submicron MOSFETs, including the Y-function method, the trans-conductance method and the direct I-V method. The results show that resistance obtained from direct I-V method is smaller than both trans-conductance method and Y function method. Theory analysis illustrate that the trans-conductance method and Y-function method give an overestimation of resistance due to the neglect of the mobility degradation under the relative high gate voltage. Relatively, direct I-V method is a promising method for estimating source/drain resistance in deep submicron MOSFETs.