Micro Unetched Oxide Defect during Buffered Oxide Etchant Process

There are two oxide regions, high and low voltage in NAND flash memory devices, in order to improve program speed and reliability. Generally, the two regions are achieved with pattern blocking by using PR(Photo Resistor) followed by etching of low voltage oxide with BOE(Buffered Oxide Etchant). Howe...

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Veröffentlicht in:	ECS transactions 2013-08, Vol.58 (6), p.127-132
Hauptverfasser:	Lim, SeungTaek, Ahn, Dukmin, Kim, Kihyun, Jung, Heechan, Lee, Byoungsu, Lee, Huihwan, Hwang, Hasub
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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