Polycrystalline CdTe PN Diode Formed by Au and Al Diffusion
This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 mm-thick thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. And scannning electron microscopy and X-ray diffraction techniques w...
Gespeichert in:
Hauptverfasser: | , , , , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 16 |
---|---|
container_issue | 2 |
container_start_page | 11 |
container_title | |
container_volume | 53 |
creator | Kim, Jin Sung Jeon, Pyo Jin Lee, Junyeong Kim, Min Je Lee, Dong-jin Kim, Tae-woo Song, Pung Keun Lee, Geon-Hwan Im, Seongil |
description | This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 mm-thick thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. And scannning electron microscopy and X-ray diffraction techniques were employed to investigate the substrate heating effect on CdTe crystalline quality. |
doi_str_mv | 10.1149/05302.0011ecst |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_05302_0011ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_05302_0011ecst</sourcerecordid><originalsourceid>FETCH-LOGICAL-c234t-2856d44bf4afb20e857853e1311a76bb45540c4f374214ecd118c9216ace731a3</originalsourceid><addsrcrecordid>eNo1j01Lw0AURQdRsFa3rucPJM6b7-AqVFuFol3UdZjMvIFImshMusi_t2pd3QuXc-EQcg-sBJDVA1OC8ZIxAPR5uiALqIQttBHm8tyV1fya3OT8yZg-MWZBHndjP_s058n1fTcgXYU90t0bferGgHQ9pgMG2s60PlI3BFr3pyXGY-7G4ZZcRddnvDvnknysn_erl2L7vnld1dvCcyGnglulg5RtlC62nKFVxiqBIACc0W0rlZLMyyiM5CDRBwDrKw7aeTQCnFiS8u_XpzHnhLH5St3BpbkB1vyoN7_qzb-6-AaJ20rC</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Polycrystalline CdTe PN Diode Formed by Au and Al Diffusion</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Kim, Jin Sung ; Jeon, Pyo Jin ; Lee, Junyeong ; Kim, Min Je ; Lee, Dong-jin ; Kim, Tae-woo ; Song, Pung Keun ; Lee, Geon-Hwan ; Im, Seongil</creator><creatorcontrib>Kim, Jin Sung ; Jeon, Pyo Jin ; Lee, Junyeong ; Kim, Min Je ; Lee, Dong-jin ; Kim, Tae-woo ; Song, Pung Keun ; Lee, Geon-Hwan ; Im, Seongil</creatorcontrib><description>This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 mm-thick thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. And scannning electron microscopy and X-ray diffraction techniques were employed to investigate the substrate heating effect on CdTe crystalline quality.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/05302.0011ecst</identifier><language>eng</language><ispartof>ECS transactions, 2013, Vol.53 (2), p.11-16</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids></links><search><creatorcontrib>Kim, Jin Sung</creatorcontrib><creatorcontrib>Jeon, Pyo Jin</creatorcontrib><creatorcontrib>Lee, Junyeong</creatorcontrib><creatorcontrib>Kim, Min Je</creatorcontrib><creatorcontrib>Lee, Dong-jin</creatorcontrib><creatorcontrib>Kim, Tae-woo</creatorcontrib><creatorcontrib>Song, Pung Keun</creatorcontrib><creatorcontrib>Lee, Geon-Hwan</creatorcontrib><creatorcontrib>Im, Seongil</creatorcontrib><title>Polycrystalline CdTe PN Diode Formed by Au and Al Diffusion</title><title>ECS transactions</title><description>This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 mm-thick thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. And scannning electron microscopy and X-ray diffraction techniques were employed to investigate the substrate heating effect on CdTe crystalline quality.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNo1j01Lw0AURQdRsFa3rucPJM6b7-AqVFuFol3UdZjMvIFImshMusi_t2pd3QuXc-EQcg-sBJDVA1OC8ZIxAPR5uiALqIQttBHm8tyV1fya3OT8yZg-MWZBHndjP_s058n1fTcgXYU90t0bferGgHQ9pgMG2s60PlI3BFr3pyXGY-7G4ZZcRddnvDvnknysn_erl2L7vnld1dvCcyGnglulg5RtlC62nKFVxiqBIACc0W0rlZLMyyiM5CDRBwDrKw7aeTQCnFiS8u_XpzHnhLH5St3BpbkB1vyoN7_qzb-6-AaJ20rC</recordid><startdate>20130101</startdate><enddate>20130101</enddate><creator>Kim, Jin Sung</creator><creator>Jeon, Pyo Jin</creator><creator>Lee, Junyeong</creator><creator>Kim, Min Je</creator><creator>Lee, Dong-jin</creator><creator>Kim, Tae-woo</creator><creator>Song, Pung Keun</creator><creator>Lee, Geon-Hwan</creator><creator>Im, Seongil</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130101</creationdate><title>Polycrystalline CdTe PN Diode Formed by Au and Al Diffusion</title><author>Kim, Jin Sung ; Jeon, Pyo Jin ; Lee, Junyeong ; Kim, Min Je ; Lee, Dong-jin ; Kim, Tae-woo ; Song, Pung Keun ; Lee, Geon-Hwan ; Im, Seongil</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c234t-2856d44bf4afb20e857853e1311a76bb45540c4f374214ecd118c9216ace731a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jin Sung</creatorcontrib><creatorcontrib>Jeon, Pyo Jin</creatorcontrib><creatorcontrib>Lee, Junyeong</creatorcontrib><creatorcontrib>Kim, Min Je</creatorcontrib><creatorcontrib>Lee, Dong-jin</creatorcontrib><creatorcontrib>Kim, Tae-woo</creatorcontrib><creatorcontrib>Song, Pung Keun</creatorcontrib><creatorcontrib>Lee, Geon-Hwan</creatorcontrib><creatorcontrib>Im, Seongil</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Jin Sung</au><au>Jeon, Pyo Jin</au><au>Lee, Junyeong</au><au>Kim, Min Je</au><au>Lee, Dong-jin</au><au>Kim, Tae-woo</au><au>Song, Pung Keun</au><au>Lee, Geon-Hwan</au><au>Im, Seongil</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Polycrystalline CdTe PN Diode Formed by Au and Al Diffusion</atitle><btitle>ECS transactions</btitle><date>2013-01-01</date><risdate>2013</risdate><volume>53</volume><issue>2</issue><spage>11</spage><epage>16</epage><pages>11-16</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 mm-thick thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. And scannning electron microscopy and X-ray diffraction techniques were employed to investigate the substrate heating effect on CdTe crystalline quality.</abstract><doi>10.1149/05302.0011ecst</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1938-5862 |
ispartof | ECS transactions, 2013, Vol.53 (2), p.11-16 |
issn | 1938-5862 1938-6737 |
language | eng |
recordid | cdi_crossref_primary_10_1149_05302_0011ecst |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
title | Polycrystalline CdTe PN Diode Formed by Au and Al Diffusion |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T01%3A59%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Polycrystalline%20CdTe%20PN%20Diode%20Formed%20by%20Au%20and%20Al%20Diffusion&rft.btitle=ECS%20transactions&rft.au=Kim,%20Jin%20Sung&rft.date=2013-01-01&rft.volume=53&rft.issue=2&rft.spage=11&rft.epage=16&rft.pages=11-16&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/05302.0011ecst&rft_dat=%3Ccrossref%3E10_1149_05302_0011ecst%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |