Polycrystalline CdTe PN Diode Formed by Au and Al Diffusion

Polycrystalline CdTe PN Diode Formed by Au and Al Diffusion

This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 mm-thick thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. And scannning electron microscopy and X-ray diffraction techniques w...

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Hauptverfasser: Kim, Jin Sung, Jeon, Pyo Jin, Lee, Junyeong, Kim, Min Je, Lee, Dong-jin, Kim, Tae-woo, Song, Pung Keun, Lee, Geon-Hwan, Im, Seongil
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 mm-thick thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. And scannning electron microscopy and X-ray diffraction techniques were employed to investigate the substrate heating effect on CdTe crystalline quality.
ISSN:1938-5862
1938-6737
DOI:10.1149/05302.0011ecst