(Keynote) X-ray Metrology for Advanced Technology Nodes
Latest innovations in high brightness X-ray sources, more efficient X-ray detectors combined to the intrinsic capability of X-rays to probe materials at sub nanometer scale are opening new opportunities for the characterization of new materials and structures like FINFETs at the advanced technology...
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Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Latest innovations in high brightness X-ray sources, more efficient X-ray detectors combined to the intrinsic capability of X-rays to probe materials at sub nanometer scale are opening new opportunities for the characterization of new materials and structures like FINFETs at the advanced technology nodes. The metrology challenges at 22 nm node and below (ie, shrinking size, thinner films, introduction of new material and 3 D structures) will also results in the development of a new generation of metrology tools and methods for process control. Moreover the transition to 450 mm wafer manufacturing will add challenges related to throughput. As stated by G450C in Albany, the throughput at 450mm for a given metrology has to match the equivalent one at 300mm. For X-ray metrology this requirement will translates in brighter X-ray sources, more efficient optics and detectors in order to speed up the measurements and meet the specifications. In this paper we will discuss new high brightness X-ray sources and the most important applications for X-ray metrology for the next five years. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/05201.0865ecst |