(Invited) Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate

Standard Si CMOS and SiGe BiCMOS enable unparalleled integration density, yield, and functionality on a single chip. In addition to realization of high performance mixed signal circuits, such as data converters, there have been many impressive demonstrations of highly integrated RF chips, including...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kazior, Thomas E., LaRoche, J., Hoke, W.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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