(Invited) Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate
Standard Si CMOS and SiGe BiCMOS enable unparalleled integration density, yield, and functionality on a single chip. In addition to realization of high performance mixed signal circuits, such as data converters, there have been many impressive demonstrations of highly integrated RF chips, including...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | Standard Si CMOS and SiGe BiCMOS enable unparalleled integration density, yield, and functionality on a single chip. In addition to realization of high performance mixed signal circuits, such as data converters, there have been many impressive demonstrations of highly integrated RF chips, including full multi-element phased arrays at mm-wave frequencies. However, the performance is not ideal because silicon cannot compete with III-V technologies in terms of power density, efficiency, noise figure, dynamic range or linearity, and speed. Heterogeneously integrating III-V devices with the CMOS gives the designers state of art III-V performance combined with the integration density and functionality of silicon. We present the status of the direct growth/fabrication of InP HBT and GaN HEMT materials/devices on a silicon substrate containing high density Si CMOS. The integration process is similar to the SiGe BiCMOS process and can be considered a III-V BiCMOS process. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/05009.1039ecst |