(Invited) Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate

Standard Si CMOS and SiGe BiCMOS enable unparalleled integration density, yield, and functionality on a single chip. In addition to realization of high performance mixed signal circuits, such as data converters, there have been many impressive demonstrations of highly integrated RF chips, including...

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Bibliographische Detailangaben
Hauptverfasser: Kazior, Thomas E., LaRoche, J., Hoke, W.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Standard Si CMOS and SiGe BiCMOS enable unparalleled integration density, yield, and functionality on a single chip. In addition to realization of high performance mixed signal circuits, such as data converters, there have been many impressive demonstrations of highly integrated RF chips, including full multi-element phased arrays at mm-wave frequencies. However, the performance is not ideal because silicon cannot compete with III-V technologies in terms of power density, efficiency, noise figure, dynamic range or linearity, and speed. Heterogeneously integrating III-V devices with the CMOS gives the designers state of art III-V performance combined with the integration density and functionality of silicon. We present the status of the direct growth/fabrication of InP HBT and GaN HEMT materials/devices on a silicon substrate containing high density Si CMOS. The integration process is similar to the SiGe BiCMOS process and can be considered a III-V BiCMOS process.
ISSN:1938-5862
1938-6737
DOI:10.1149/05009.1039ecst