NMOS SiP Epitaxy Process - Optimizing Facet Growth

NMOS SiP Epitaxy Process - Optimizing Facet Growth

Phosphorous doped selective epitaxial technology has gained interest recently as the source / drain for NMOS. High, >1E20 atm./cc., Phosphorous doping is required to ensure low contact resistance when metal contacts are formed. The study of contact resistance as a function of temperature and chem...

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Hauptverfasser: Liao, Chin I., Chien, Chin Cheng, Chan, Michael, Yang, Chan Lon, Wu, J. Y., Chung, Chuck, Ramachandran, Balasubramanian
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Chien, Chin Cheng
Chan, Michael
Yang, Chan Lon
Wu, J. Y.
Chung, Chuck
Ramachandran, Balasubramanian
description Phosphorous doped selective epitaxial technology has gained interest recently as the source / drain for NMOS. High, >1E20 atm./cc., Phosphorous doping is required to ensure low contact resistance when metal contacts are formed. The study of contact resistance as a function of temperature and chemical composition of reactants is presented in this paper. Additionally, the phosphorous growth needs to have a facet to prevent any nitride residue during the remaining process flows. In this paper, the faceted growth of high Phosphorous doped Silicon epitaxy using various process schemes is explored.
doi_str_mv 10.1149/05009.0443ecst
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title NMOS SiP Epitaxy Process - Optimizing Facet Growth
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