NMOS SiP Epitaxy Process - Optimizing Facet Growth
Phosphorous doped selective epitaxial technology has gained interest recently as the source / drain for NMOS. High, >1E20 atm./cc., Phosphorous doping is required to ensure low contact resistance when metal contacts are formed. The study of contact resistance as a function of temperature and chem...
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Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Phosphorous doped selective epitaxial technology has gained interest recently as the source / drain for NMOS. High, >1E20 atm./cc., Phosphorous doping is required to ensure low contact resistance when metal contacts are formed. The study of contact resistance as a function of temperature and chemical composition of reactants is presented in this paper. Additionally, the phosphorous growth needs to have a facet to prevent any nitride residue during the remaining process flows. In this paper, the faceted growth of high Phosphorous doped Silicon epitaxy using various process schemes is explored. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/05009.0443ecst |