High Quality Silicon Cap Layer for 28nm and Beyond PMOS Processes

High quality embedded SiGe film with [Ge] concentration > 35% with Epitaxial grown Silicon (Si) cap layer has been demonstrated on a state-of-the-art 28nm logic flow. Si cap layer is a significant benefit to SiGe device for p-MOSFET contact resistance improvement but adversely affects the SiGe fi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Liao, Chin I., Hsuan, Teng Chun, Chien, Chin Cheng, Chan, Michael, Yang, Chan Lon, Wu, J. Y., Ramachandran, Balasubramanian
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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