High Quality Silicon Cap Layer for 28nm and Beyond PMOS Processes
High quality embedded SiGe film with [Ge] concentration > 35% with Epitaxial grown Silicon (Si) cap layer has been demonstrated on a state-of-the-art 28nm logic flow. Si cap layer is a significant benefit to SiGe device for p-MOSFET contact resistance improvement but adversely affects the SiGe fi...
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Format: | Tagungsbericht |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | High quality embedded SiGe film with [Ge] concentration > 35% with Epitaxial grown Silicon (Si) cap layer has been demonstrated on a state-of-the-art 28nm logic flow. Si cap layer is a significant benefit to SiGe device for p-MOSFET contact resistance improvement but adversely affects the SiGe film strain relaxation especially for the high concentration [Ge] (> 35%). High quality, relaxation free SiGe film, with surface roughness improved from 4.21 to 0.65nm and 30% device contact resistance reduction are characterized in this work. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/05009.0419ecst |