High Quality Silicon Cap Layer for 28nm and Beyond PMOS Processes

High Quality Silicon Cap Layer for 28nm and Beyond PMOS Processes

High quality embedded SiGe film with [Ge] concentration > 35% with Epitaxial grown Silicon (Si) cap layer has been demonstrated on a state-of-the-art 28nm logic flow. Si cap layer is a significant benefit to SiGe device for p-MOSFET contact resistance improvement but adversely affects the SiGe fi...

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Hauptverfasser: Liao, Chin I., Hsuan, Teng Chun, Chien, Chin Cheng, Chan, Michael, Yang, Chan Lon, Wu, J. Y., Ramachandran, Balasubramanian
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container_issue 9
container_start_page 419
container_title
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creator Liao, Chin I.
Hsuan, Teng Chun
Chien, Chin Cheng
Chan, Michael
Yang, Chan Lon
Wu, J. Y.
Ramachandran, Balasubramanian
description High quality embedded SiGe film with [Ge] concentration > 35% with Epitaxial grown Silicon (Si) cap layer has been demonstrated on a state-of-the-art 28nm logic flow. Si cap layer is a significant benefit to SiGe device for p-MOSFET contact resistance improvement but adversely affects the SiGe film strain relaxation especially for the high concentration [Ge] (> 35%). High quality, relaxation free SiGe film, with surface roughness improved from 4.21 to 0.65nm and 30% device contact resistance reduction are characterized in this work.
doi_str_mv 10.1149/05009.0419ecst
format Conference Proceeding
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identifier ISSN: 1938-5862
ispartof ECS transactions, 2013, Vol.50 (9), p.419-424
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1938-6737
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title High Quality Silicon Cap Layer for 28nm and Beyond PMOS Processes
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