Thiol-Ene Reaction Derived Sol-Gel Hybrid Dielectric Layer for Oragnic Thin Film Transistors

Thiol-ene reaction derived dielectric layer, phenyl-sulfur-hybrimer(PSH) was synthesized by mercaptopropyl-phenyl-oligosiloxane(MPO) and phenyl-vinyl-oligosiloxane(PVO). These oligosiloxane was synthesized by sol-gel process. MPO is a result of non-hydrolytic sol-gel condensation between (3-mercaptopropyl)trimethoxysilane and diphenylsilanediol, and PVO is a result of non-hydrolitic sol-gel condensation between vinyltrimethoxysilane and diphenylsilanediol. In this work, the thiol-ene derived dielectric layer is applied to OTFT for the first time. It has relatively high dielectric constant (k=4.1) than silicon dioxide (k=3.9) which is generally used for dielectric layer and shows hysteresis-free behavior.