A New Analytic Model for Double Gate FinFETs Parasitic Resistance

A new analytic model for Parasitic Resistance of Double Gate FinFETs is proposed in this work. The model was developed considering the current distribution observed in three-dimensional simulations. The contact resistance was modeled using a variable impedance transmission line model, to approximate source and drain geometries to the real shapes of these regions. The model has a closed expression, without adjustment parameters and is very accurate when compared to simulation results and published experimental data.