Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure

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Veröffentlicht in:Japanese Journal of Applied Physics 1966-01, Vol.5 (2), p.180
Hauptverfasser: Miura, Yoshio, Matukura, Yasuo
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container_title Japanese Journal of Applied Physics
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creator Miura, Yoshio
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doi_str_mv 10.1143/JJAP.5.180
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ispartof Japanese Journal of Applied Physics, 1966-01, Vol.5 (2), p.180
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure
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