ZnInS Thin Film Solar Cell Fabricated by Sputtering Process
To achieve low cost solar cells, new fabrication processes should be developed for higher throughput and utilization rate. In this study, we focused on a sputtering method and found that a multinary compound ZnInS (II--III--VI) is suitable for this process. The ZnInS thin film deposited by sputterin...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2012-10, Vol.51 (10), p.10NC37-10NC37-4 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | To achieve low cost solar cells, new fabrication processes should be developed for higher throughput and utilization rate. In this study, we focused on a sputtering method and found that a multinary compound ZnInS (II--III--VI) is suitable for this process. The ZnInS thin film deposited by sputtering had an n-type semiconductor characteristic. A AgInTe/ZnInS thin-film solar cell fabricated by the sputtering process in a layer structure of glass/Mo/AgInTe/ZnInS/AZO showed a conversion efficiency of over 1%, the origin of which was mainly the ZnInS layer. These results suggested that ZnInS is a strong candidate photovoltaic material for fabrication with the sputtering process. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.51.10NC37 |