Extraction Enhanced Lateral Insulated Gate Bipolar Transistor: A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Dobule Difused Metal Oxide Semiconductor Field-Effect Transistor

We have successfully developed novel extraction enhanced lateral insulated gate bipolar transistors (E 2 LIGBTs) in conventional silicon on insulator (SOI) wafers, which exhibit super-high speed switching of 34 ns turn-off time and a low on-state voltage of 3.7 V at 84 A/cm 2 simultaneously with a high breakdown voltage of 738 V. This is the first report showing its superior switching speed and on-resistance compared to conventional lateral double diffused metal oxide semiconductor field-effect transistor (LDMOS). The superior performance is achieved by a new anode structure designed with the proposed E 2 concept, which simultaneously achieves enhanced electron extraction and suppression of hole injection at the anode region without life time control. The E 2 concept is realized using the anode structure, consisting of a narrow p + -injector and a wide Schottky contact on a lightly doped p-layer over an n-buffer. The switching speed can be controlled by the area ratio of the Schottky area over the injector area.