Wavelength Tunable Quantum Dot Single-Photon Source with a Side Gate
We demonstrate photon antibunching from a wavelength controlled quantum dot single-photon source with a side gate. The photoluminescence peaks from the quantum dots embedded in the side-gate structure are clearly identified as a neutral exciton and a neutral biexciton by the studies of excitation-po...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2012-02, Vol.51 (2), p.02BJ05-02BJ05-3 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We demonstrate photon antibunching from a wavelength controlled quantum dot single-photon source with a side gate. The photoluminescence peaks from the quantum dots embedded in the side-gate structure are clearly identified as a neutral exciton and a neutral biexciton by the studies of excitation-power dependence, polarization dependence, and photon correlation. The neutral exciton energy is controlled by the side gate via the quantum confined Stark effect. Measurement of the second-order autocorrelation function indicates $g^{(2)}(0) = 0.07$ at 0 V, 0.14 at 0.8 V, and 0.24 at 0.9 V. The results show $g^{(2)}(0)$s are below the 0.5 limit necessary for classification as a single photon source even under applied gate voltage. We also show a biexciton-exciton cascade which can be used to create entangled photon pairs. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.51.02BJ05 |