Electron Transport Properties in HSi(OC2H5)3 Vapor

The electron swarm parameters in HSi(OC 2 H 5 ) 3 (triethoxysilane, TRIES) vapor have been investigated for relatively wide ranges of reduced electric field ($E/N$). Based on the arrival-time spectra (ATS) method for electrons using a double-shutter drift tube, the drift velocity and the longitudinal diffusion coefficient were measured for the $E/N=20{\mbox{--}}5000$ Td, and the ionization coefficient was obtained for $E/N=300{\mbox{--}}5000$ Td. The results were compared with those for SiH 4 and Si(OC 2 H 5 ) 4 (tetraethoxysilane, TEOS), to show characteristics similar to the parameters in TEOS. We also determined the electron collision cross sections for TRIES by means of the Boltzmann equation analysis.