Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO 2 Films Formed by Atomic Layer Deposition
In this article, thin hafnium oxide (HfO 2 ) films deposited by atomic layer deposition (ALD) were investigated as a sensing layer on an electrolyte–insulator–semiconductor (EIS) structure for pH sensor applications. Compared with sputtering, ALD provides the possibility of shrinking the thickness o...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2011-10, Vol.50 (10S), p.10 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | In this article, thin hafnium oxide (HfO
2
) films deposited by atomic layer deposition (ALD) were investigated as a sensing layer on an electrolyte–insulator–semiconductor (EIS) structure for pH sensor applications. Compared with sputtering, ALD provides the possibility of shrinking the thickness of the HfO
2
sensing layer down to 3.5 nm with a low drift coefficient ( |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.50.10PG03 |