High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO 2 Gate Dielectric
Biaxially-strained Ge p-channel field effect transistors (pFETs) have been fabricated for the first time in a 65 nm technology. The devices are designed to have a reduced effective oxide thickness (EOT) while maintaining minimized short channel effects. Low and high field transport has been studied...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2011-04, Vol.50 (4S), p.4 |
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| container_issue | 4S |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 50 |
| creator | Mitard, Jerome Jaeger, Brice De Eneman, Geert Dobbie, Andrew Myronov, Maksym Kobayashi, Masaharu Geypen, Jef Bender, Hugo Vincent, Benjamin Krom, Raymond Franco, Jacopo Winderickx, Gillis Vrancken, Evi Vanherle, Wendy Wang, Wei-E. Tseng, Joshua Loo, Roger Meyer, Kristin De Caymax, Matty Pantisano, Luigi Leadley, David R. Meuris, Marc Absil, Philippe P. Biesemans, Serge Hoffmann, Thomas |
| description | Biaxially-strained Ge p-channel field effect transistors (pFETs) have been fabricated for the first time in a 65 nm technology. The devices are designed to have a reduced effective oxide thickness (EOT) while maintaining minimized short channel effects. Low and high field transport has been studied by in-depth electrical characterization, showing a high hole-mobility that is enhanced by up to 70% in the strained devices. The important role of pocket implants in degrading the drive current is highlighted. Using a judicious implantation scheme, we demonstrate a significant gain in on-current (up to 35%) for nanoscaled strained Ge pFETs. Simultaneous optimization of the gate metal and dielectric, together with the corresponding uniaxial stress engineering, is identified as a promising path for further performance enhancement. |
| doi_str_mv | 10.1143/JJAP.50.04DC17 |
| format | Article |
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| title | High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO 2 Gate Dielectric |
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