Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors

This paper presents an experimentally found device-size-independent universal relationship between the settling time of floating-body silicon-on-insulator (SOI) metal--oxide--semiconductor field-effect transistors (MOSFETs) and the substrate current in body-tied devices. Such a relationship could enable one to characterize dynamic properties of SOI MOSFETs through DC measurements and would be useful for physical compact modeling of history effects.