Analytical Approach for Enhancement of n-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing

Enhancement of n-channel metal--oxide--semiconductor field-effect transistor (nMOSFET) performance with a carbon-doped source/drain (Si:C-S/D) was approached analytically for the first time. Si:C-S/D was formed by molecular carbon (C 7 H x ) ion implantation and laser annealing. C 7 H x implantation forms a smooth interface between Si:C layers and Si substrates, and laser annealing also achieves a high carbon concentration of substitution. The channel strain with Si:C-S/D was successfully measured by UV Raman spectroscopy using a particular test pattern. The thick Si:C-S/D layer and the high carbon concentration of substitution produce a large strain at the channel region. It was confirmed that the performance of nMOSFETs is effectively improved by strained Si:C-S/D. These analytical approaches are quite valuable for promoting the development of strained nMOSFETs with Si:C-S/D.