Deep Electronic Levels of Al x Ga 1-x N with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

Deep Electronic Levels of Al x Ga 1-x N with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

Deep electronic levels of Al x Ga 1- x N (0.25< x 1.5 eV) were detected by photocapacitance measurement. It was found that the energy position of the dominant deep level closely followed the Fermi level stabilization energy reported by Walukiewicz et al. [J. Cryst. Growth 269 (2004) 119], indicat...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-10, Vol.49 (10R), p.101001
Hauptverfasser: Ooyama, Kimihito, Sugawara, Katsuya, Okuzaki, Shinya, Taketomi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Hashizume, Tamotsu
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container_issue 10R
container_start_page 101001
container_title Japanese Journal of Applied Physics
container_volume 49
creator Ooyama, Kimihito
Sugawara, Katsuya
Okuzaki, Shinya
Taketomi, Hiroyuki
Miyake, Hideto
Hiramatsu, Kazumasa
Hashizume, Tamotsu
description Deep electronic levels of Al x Ga 1- x N (0.25< x 1.5 eV) were detected by photocapacitance measurement. It was found that the energy position of the dominant deep level closely followed the Fermi level stabilization energy reported by Walukiewicz et al. [J. Cryst. Growth 269 (2004) 119], indicating that the origin of the dominant deep level in AlGaN is related to a defect complex including anti-site defects and divacancies.
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title Deep Electronic Levels of Al x Ga 1-x N with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
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