Deep Electronic Levels of Al x Ga 1-x N with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

Deep electronic levels of Al x Ga 1- x N (0.25< x 1.5 eV) were detected by photocapacitance measurement. It was found that the energy position of the dominant deep level closely followed the Fermi level stabilization energy reported by Walukiewicz et al. [J. Cryst. Growth 269 (2004) 119], indicating that the origin of the dominant deep level in AlGaN is related to a defect complex including anti-site defects and divacancies.