Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates

Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates

We have investigated the epitaxial growth of InN films on yttria-stabilized zirconia (YSZ) substrates with various surface orientations. Through systematic crystallographic investigations, we have found that the epitaxial relationship of $\text{InN}[11\bar{2}0] \parallel \text{YSZ}\ [1\bar{1}0]$ and...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-08, Vol.49 (8), p.080204-080204-3
Hauptverfasser: Fujii, Tomoaki, Kobayashi, Atsushi, Shimomoto, Kazuma, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi
Format: Artikel
Sprache:eng
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Zusammenfassung:We have investigated the epitaxial growth of InN films on yttria-stabilized zirconia (YSZ) substrates with various surface orientations. Through systematic crystallographic investigations, we have found that the epitaxial relationship of $\text{InN}[11\bar{2}0] \parallel \text{YSZ}\ [1\bar{1}0]$ and $\text{InN}[0001] \parallel \text{YSZ}\ [111]$ holds in the InN/YSZ system. This enables us to grow semipolar InN films with arbitrary orientations.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.080204