Evaluation of the Validity of Crystallization Temperature Measurements Using Thermography with Different Sample Configurations

We describe further progress of a previously reported novel crystallization temperature ($T_{\text{x}}$) measurement method applicable for small sample sizes. The method uses thermography and detects $T_{\text{x}}$ as a change in emissivity of thin film amorphous alloy samples. We applied this method to various sample configurations of Pd--Cu--Si thin film metallic glass (TFMG). The validity of the detected $T_{\text{x}}$ was determined by electrical resistivity monitoring and differential scanning calorimetry (DSC). Crystallization temperature can be detected in all sample configurations; however, it was found that the magnitude of the detected change of emissivity at $T_{\text{x}}$ depended on the sample configuration. This emissivity change was clear in the absence of a higher emissivity material. The results suggest that this method can achieve high-throughput characterization of $T_{\text{x}}$ for integrated small samples such as in a thin film library.