Deposition Yield and Physical Properties of Carbon Films Deposited by Focused-Ion-Beam Chemical Vapor Deposition

The deposition yield and physical properties of carbon films fabricated by focused-ion-beam (FIB) chemical vapor deposition were examined using several ion beam species of hydrogen, helium, xenon, and gallium. A gas-FIB was generated using an inductively coupled plasma ion source. It was found that the deposition yield is proportional to the total stopping power of the beam that penetrates into the carbon film. The physical properties of the carbon films deposited using gas-FIB are similar to those of films deposited using Ga-FIB, except for the Young's modulus.