Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory

In this paper, we describe chemical vapor deposition (CVD) of GeSbTe (GST) films for fabricating phase change memory. A low-carbon-impurity GST film was deposited by CVD. Film composition and structure varied significantly depending on deposition temperature and pressure. The tendency of composition...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2010-05, Vol.49 (5), p.05FF06-05FF06-2
Hauptverfasser:	Machida, Hideaki, Hamada, Seichi, Horiike, Takafumi, Ishikawa, Masato, Ogura, Atsushi, Ohshita, Yoshio, Ohba, Takayuki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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