Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory

In this paper, we describe chemical vapor deposition (CVD) of GeSbTe (GST) films for fabricating phase change memory. A low-carbon-impurity GST film was deposited by CVD. Film composition and structure varied significantly depending on deposition temperature and pressure. The tendency of composition variation on a TiN substrate was the same as that on a SiO 2 substrate. Finally, flat Ge 2 Sb 2 Te 5 thin films were obtained below 300 \mbox{ \circ C} using tert -butylgermanium, triisopropylantimony and diisopropyltellurium as precursors.