CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio
The effect of Co 20 Fe 60 B 20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co 90 Fe 10 /Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB la...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2010-04, Vol.49 (4), p.04DM04-04DM04-4 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The effect of Co 20 Fe 60 B 20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co 90 Fe 10 /Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB layer, reached 43% at 1.77 W/cm 2 in MTJs with a 1.8-nm-thick CoFeB layer inserted on both sides of the MgO barrier. With increasing CoFeB layer thickness, the optimal annealing temperature ($T_{\text{a}}$) realizing the maximum TMR ratio increased along with the TMR ratio. The MTJs with 3.0-nm-thick CoFeB deposited at 1.77 W/cm 2 showed a TMR ratio of 91% at $T_{\text{a}} = 250$ \mbox{ \circ C}, where the perpendicular magnetic anisotropy is maintained. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.49.04DM04 |