CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio

The effect of Co 20 Fe 60 B 20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co 90 Fe 10 /Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB la...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-04, Vol.49 (4), p.04DM04-04DM04-4
Hauptverfasser: Mizunuma, Kotaro, Ikeda, Shoji, Yamamoto, Hiroyuki, Gan, Hua Dong, Miura, Katsuya, Hasegawa, Haruhiro, Hayakawa, Jun, Ito, Kenchi, Matsukura, Fumihiro, Ohno, Hideo
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Sprache:eng
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Zusammenfassung:The effect of Co 20 Fe 60 B 20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co 90 Fe 10 /Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB layer, reached 43% at 1.77 W/cm 2 in MTJs with a 1.8-nm-thick CoFeB layer inserted on both sides of the MgO barrier. With increasing CoFeB layer thickness, the optimal annealing temperature ($T_{\text{a}}$) realizing the maximum TMR ratio increased along with the TMR ratio. The MTJs with 3.0-nm-thick CoFeB deposited at 1.77 W/cm 2 showed a TMR ratio of 91% at $T_{\text{a}} = 250$ \mbox{ \circ C}, where the perpendicular magnetic anisotropy is maintained.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.04DM04