Very Smooth SiO 2 /SiC Interface Formed by Supercritical Water Oxidation at Low Temperature

We have formed a SiO 2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 °C) than that of conventional SiC thermal oxidation (1100 °C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H 2 O and O 2 ) under a h...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-04, Vol.49 (4S), p.4
Hauptverfasser: Futatsuki, Takashi, Oe, Taro, Aoki, Hidemitsu, Komatsu, Naoyoshi, Kimura, Chiharu, Sugino, Takashi
Format: Artikel
Sprache:eng
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Zusammenfassung:We have formed a SiO 2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 °C) than that of conventional SiC thermal oxidation (1100 °C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H 2 O and O 2 ) under a high-pressure condition. We also revealed that SCW oxidation under suitable conditions suppresses the formation of SiO 2 /SiC interface microroughness. The smooth SiO 2 /SiC interface obtained by this low-temperature oxidation process is expected to contribute to improving the mobility performance of future SiC field-effect transistors (FETs).
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.04DF18