Very Smooth SiO 2 /SiC Interface Formed by Supercritical Water Oxidation at Low Temperature
We have formed a SiO 2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 °C) than that of conventional SiC thermal oxidation (1100 °C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H 2 O and O 2 ) under a h...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2010-04, Vol.49 (4S), p.4 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We have formed a SiO
2
layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 °C) than that of conventional SiC thermal oxidation (1100 °C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H
2
O and O
2
) under a high-pressure condition. We also revealed that SCW oxidation under suitable conditions suppresses the formation of SiO
2
/SiC interface microroughness. The smooth SiO
2
/SiC interface obtained by this low-temperature oxidation process is expected to contribute to improving the mobility performance of future SiC field-effect transistors (FETs). |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.49.04DF18 |