Elevated-Confined Phase-Change Random Access Memory Cells

A new elevated-confined phase-change random access memory (PCRAM) cell structure to reduce power consumption was proposed. In this proposed structure, the confined phase-change region is sitting on top of a small metal column enclosed by a dielectric at the sides. Hence, more heat can be effectively...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-04, Vol.49 (4), p.04DD16-04DD16-4
Hauptverfasser: Lee, Hock Koon, Shi, Luping, Zhao, Rong, Yang, Hongxin, Lim, Kian Guan, Li, Jianming, Chong, Tow Chong
Format: Artikel
Sprache:eng
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Zusammenfassung:A new elevated-confined phase-change random access memory (PCRAM) cell structure to reduce power consumption was proposed. In this proposed structure, the confined phase-change region is sitting on top of a small metal column enclosed by a dielectric at the sides. Hence, more heat can be effectively sustained underneath the phase-change region. As for the conventional structure, the confined phase-change region is sitting directly above a large planar bottom metal electrode, which can easily conduct most of the induced heat away. From simulations, a more uniform temperature profile around the active region and a higher peak temperature at the phase-change layer (PCL) in an elevated-confined structure were observed. Experimental results showed that the elevated-confined PCRAM cell requires a lower programming power and has a better scalability than a conventional confined PCRAM cell.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.04DD16